V1M2 Etch uses ion-assisted plasma etching of low-k dielectric to define the M2 via-and-trench cavity above M1, enabling later copper fill while coupling profile control to material damage [P1].
V1M2 Etch belongs to the M2 module and forms the via-and-trench cavity that connects the M2 wiring to the underlying M1. The dielectric opening is followed by residue removal, barrier and seed formation, and copper filling in the current Flow. This is not an M1 t…
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