Metal-gate CMP removes the continuous conductive overburden to retain trench-confined gates and establish a surface reference for subsequent films and contact patterning (Engineering Practice).
This 28nm Flow forms the high-k dielectric and TiN in the early gate module before depositing the amorphous-silicon placeholder. Source/drain processing and interlayer-dielectric formation precede dummy-silicon removal and replacement-gate metal processing. Replac…
Read the full explanation and sources for free.
Sign Up Free