Nitride layers serve as robust hard masks and etch-stop layers due to their stronger bond energies compared to oxide, enabling controlled termination of the etch near sensitive device regions [A1].
The CB Etch step in the CONTACT module of a 28nm planar CMOS flow is responsible for opening contact vias through the composite contact barrier stack, typically consisting of deposited oxide and nitride layers patterned by CB Photo, to expose the underlyi…
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