Within the photoresist, exposure induces photochemical reactions that change the polymer solubility in the developer, converting the optical image into a physical resist pattern following development [T2].
The P1 Poly Photo step defines the first critical lithographic pattern for the polysilicon gate in a 28 nm planar CMOS flow, and therefore directly sets the effective gate length that controls channel electrostatics, drive current, and leakage beha…
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