Selective SiGe epitaxy forms source/drain volume in gate-adjacent recesses, coupling lattice mismatch to channel strain through geometry and elastic boundaries (Engineering Practice).
The retained sequence is SiGe patterning, trench etching and cleaning, TMAH wet etching, pre-cleaning, this deposition, then cleaning and hard-mask removal. The added SiGe subsequently undergoes hard-mask removal and spacer processing, which must preserve the required relation to the source/drain region.
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