High-k HfO2 deposition is predominantly implemented using atomic layer deposition, which relies on sequential, self-limiting surface reactions to achieve monolayer-level thickness control and excellent uniformity across planar features [P1].
The High-k HfO2 Deposition step establishes the primary gate dielectric in the 28nm planar MOSFET gate stack, replacing the electrical function previously provided by ultra-thin SiO2 while maintaining electrostatic c…
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