Process monitoring therefore relies on end-point or time-based control correlated to surface-state evolution rather than bulk removal, reflecting the sensitivity of nitride etching to surface chemistry described in advanced spacer etch studies [P1].
The Spacer2 Etch step exists to anisotropically remove the second spacer stack from horizontal surfaces while preserving the vertical sidewalls adjacent to the gate, thereby defining the final gate-to-source/…
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