Tungsten contact CMP clears field overburden while retaining in-hole contacts before M1 dielectric integration and interconnect patterning (Engineering Practice).
This step receives metal overburden after CT Tungsten Fill. M1 NDC, low-k dielectric and first-metal patterning follow. CT carbon masking, DARC and contact opening occurred earlier; they are not a new CT preparation sequence following this CMP.
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