Technical Blog
Deep dive into the physics and integration logic of semiconductor manufacturing
28nm Planar Middle-of-Line Integration: Process Flow Principles and Strain Engineering Mechanisms
Role in the Complete Flow The middle-of-line (MOL) module in a 28nm planar logic flow sits at a critical juncture between front-end-of-line (FEOL) transistor formation and…
28nm Planar Process Flow: Integration Logic, Device Physics, and Module Dependencies
Process Map and Scope The 28nm Planar process flow represents the final major technology generation built on classical planar metal-oxide-semiconductor field-effect transistor…
28nm Planar Replacement Metal Gate Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 28nm planar replacement metal gate (RMG) integration is a pivotal module that sits between front-end-of-line (FEOL) transistor formation and…
28nm Planar Redistribution Via and Aluminum Pad Integration: Process Flow Principles and Integration Logic
Role in the Complete Flow The 28nm Planar redistribution via and aluminum pad integration module occupies a critical position near the terminal portion of the back-end-of-line…
28nm Planar Source-Drain Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The source-drain (SD) module in the 28nm planar logic flow sits at a pivotal position within the front-end-of-line (FEOL) sequence.
28nm Planar Sidewall Spacer Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The sidewall spacer module sits at a critical junction in the 28nm Planar process flow, bridging gate stack formation and source/drain engineering.
28nm Planar Shallow Trench Isolation Process Flow: Principles, Integration Logic, and Mechanisms
Role in the Complete Flow The 28nm Planar shallow trench isolation (STI) module is one of the earliest structural-defining stages in the overall 28nm Planar process flow.
28nm Planar Well Formation Process Flow: Integration Logic, Device Physics, and Module Dependencies
Role in the Complete Flow The well formation module in the 28nm planar process flow serves as the foundational doping architecture upon which all subsequent transistor…
40nm BSI CMOS Image Sensor Backside Passivation Integration: Process Flow Principles and Device Physics
Role in the Complete Flow In a 40nm BSI CMOS Image Sensor (CIS) process flow, the backside passivation (BKPAS) module occupies a critical position between backside wafer thinning…
40nm BSI CMOS Image Sensor Sensor and Logic Wafer Bonding Process Flow: Integration Principles and Physical Mechanisms
Role in the Complete Flow CMOS image sensors have rapidly grown in market adoption, taking over applications previously dominated by charge-coupled devices due to enhanced…
40nm BSI CMOS Image Sensor Bond-Pad Integration: Process Flow Principles and Integration Logic
Role in the Complete Flow In a 40nm BSI CMOS Image Sensor, the bond-pad integration module sits at the top of the back-end-of-line (BEOL) interconnect stack and serves as the…
40nm BSI CMOS Image Sensor Process Flow: Integration Principles, Device Physics, and Module Dependencies
Process Map and Scope The 40nm Backside Illumination (BSI) CMOS Image Sensor represents a convergence of advanced CMOS logic fabrication technology with specialized…