Technical Blog
Deep dive into the physics and integration logic of semiconductor manufacturing
14nm FinFET Sidewall Spacer Integration Process Flow: Principles, Mechanisms, and Module Dependencies
Role in the Complete Flow The sidewall spacer module in a 14nm FinFET process flow occupies a pivotal position between gate patterning and source/drain (S/D) epitaxial growth.
14nm FinFET Shallow Trench Isolation Notch Integration: Process Flow Principles and Mechanism Deep Dive
Role in the Complete Flow In the 14nm FinFET technology node, the shallow trench isolation (STI) notch module occupies a uniquely critical position within the broader 14nm FinFET…
14nm FinFET STI Process Flow: Integration Principles, Physical Mechanisms, and Module Dependencies
Role in the Complete Flow In the 14nm FinFET integration architecture, the shallow trench isolation (STI) module establishes the primary dielectric barriers that electrically…
14nm FinFET Starting Wafer and Substrate Preparation: Integration Logic, Physics, and Module Fundamentals
Role in the Complete Flow The 14nm FinFET starting wafer and substrate preparation module — often referred to as the WFR (wafer start) module — is the initial process block in…
28nm Planar Active-Area Definition Process Flow: Integration Principles and Physical Mechanisms
Role in the Complete Flow In a 28nm planar CMOS process, the active-area (AA) definition module occupies a foundational position in the early front-end-of-line (FEOL) sequence.
28nm Final Dielectric Passivation and Opening Integration
The Actual Scope of the Final Module The final dielectric module in the linked 28nm planar flow prepares and protects the surface left by completed interconnect fabrication.
28nm Planar Contact Formation Process Flow: Integration Principles, Mechanisms, and Module Dependencies
Role in the Complete Flow In the 28nm Planar process flow, the contact formation module occupies a pivotal position: it bridges the front-end-of-line (FEOL) transistor structures…
28nm Planar Gate Stack Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 28nm planar gate stack integration is one of the most critical modules in the entire 28nm Planar process flow, sitting at the intersection of…
28nm Planar Well and Channel Implant Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 28nm Planar well and channel implant integration represents a critical inflection point in the front-end-of-line (FEOL) process sequence.
28nm Planar Metal-One Interconnect Integration: Process Flow Principles and Integration Logic
Role in the Complete Flow The metal-one (M1) interconnect module in the 28nm planar technology node occupies a pivotal position in the back-end-of-line (BEOL) sequence: it is the…
28nm Planar Metal-Two Interconnect Integration: Process Flow Principles and Mechanism Deep Dive
Role in the Complete Flow The 28nm Planar metal-two (M2) interconnect integration module occupies a pivotal position in the back-end-of-line (BEOL) sequence of a 28nm planar CMOS…
28nm Planar Upper-Metal Interconnect Integration: Process Flow Principles and Integration Logic
Role in the Complete Flow The 28nm Planar upper-metal interconnect integration represents a critical transition zone in the back-end-of-line (BEOL) process stack, where the…