Technical Blog
Deep dive into the physics and integration logic of semiconductor manufacturing
40nm BSI CMOS Image Sensor Pinned Photodiode Integration Process Flow: Principles, Physics, and Module Dependencies
Role in the Complete Flow The pinned photodiode (PPD) module sits at the optical heart of the 40nm BSI CMOS Image Sensor process flow P1. Upstream, this module
28nm Planar Upper-Metal Interconnect Integration: Process Flow Principles and Integration Logic
Role in the Complete Flow The 28nm Planar upper-metal interconnect integration represents a critical transition zone in the back-end-of-line (BEOL) process stac
7nm FinFET Source-Drain Integration: Process Flow Principles, Device Physics, and Module Dependencies
Role in the Complete Flow The source-drain (SD) integration module in a 7nm FinFET process occupies a pivotal position between front-end-of-line (FEOL) transist
14nm FinFET Epitaxial Silicon Source-Drain Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 14nm FinFET epitaxial silicon source-drain (SD_ESI) module occupies a pivotal position in the front-end-of-line (FEOL) process seq
14nm FinFET Contact Metal Recess Integration: Process Flow, Mechanisms, and Failure Modes
Role in the Complete Flow The 14nm FinFET contact metal recess (CONTACT_MR) module occupies a critical position in the middle-end-of-line (MEOL) sequence, bridg
14nm FinFET Second Pre-Metal Dielectric Integration: Process Flow Principles and Mechanisms
Role in the Complete Flow In the 14nm FinFET technology platform, the second pre-metal dielectric (PMD2) module occupies a pivotal position between front-end-of
40nm BSI CMOS Image Sensor Metal-One Interconnect Integration: Process Flow Principles and Integration Logic
Role in the Complete Flow In the 40nm backside-illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor process flow, the metal-one (MET1)
40nm BSI CMOS Image Sensor Color-Filter Array Integration: Process Flow Principles and Device Physics
Role in the Complete Flow The color-filter array (CFA) integration module in a 40nm backside illumination (BSI) complementary metal-oxide-semiconductor (CMOS) i
40nm BSI CMOS Image Sensor N-type Floating-Diffusion Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 40nm BSI CMOS Image Sensor represents a generation of backside-illuminated pixel technology in which the N-type floating-diffusion
40nm BSI CMOS Image Sensor Dual Gate-Oxide Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 40nm BSI CMOS Image Sensor dual gate-oxide (DGOX) integration module occupies a pivotal position within the overall front-end-of-l
40nm BSI CMOS Image Sensor Pixel and Peripheral NMOS Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow In a 40nm BSI (Backside Illumination) CMOS image sensor, the pixel and peripheral NMOS integration module occupies a pivotal position
40nm BSI CMOS Image Sensor Well Formation Process Flow: Integration Logic, Physics, and Ox Growth Principles
Role in the Complete Flow In the 40nm BSI CMOS Image Sensor process flow, the well formation module occupies a pivotal position between device isolation complet