Technical Blog
Deep dive into the physics and integration logic of semiconductor manufacturing
40nm BSI CMOS Image Sensor Shallow Trench Isolation Process Flow: Integration Logic, Mechanisms, and Engineering Tradeoffs
Role in the Complete Flow In a 40nm backside illumination (BSI) complementary metal-oxide semiconductor (CMOS) image sensor, the shallow trench isolation (STI)
40nm BSI CMOS Image Sensor Process Flow: Integration Principles, Device Physics, and Module Dependencies
Process Map and Scope The 40nm BSI CMOS Image Sensor represents a convergence of advanced CMOS logic fabrication technology with specialized optoelectronic devi
40nm BSI CMOS Image Sensor Starting Wafer and Substrate Preparation: Principles, Integration Logic, and Process Physics
Role in the Complete Flow The 40nm BSI CMOS Image Sensor starting wafer and substrate preparation module — often referred to as the WFR module — is the foundati
28nm Planar Middle-of-Line Integration: Process Flow Principles and Strain Engineering Mechanisms
Role in the Complete Flow The middle-of-line (MOL) module in a 28nm planar logic flow sits at a critical juncture between front-end-of-line (FEOL) transistor fo
28nm Planar Process Flow: Integration Logic, Device Physics, and Module Dependencies
Process Map and Scope The 28nm Planar process flow represents the final major technology generation built on classical planar metal-oxide-semiconductor field-ef
28nm Planar Active-Area Definition Process Flow: Integration Principles and Physical Mechanisms
Role in the Complete Flow In a 28nm planar CMOS process, the active-area (AA) definition module occupies a foundational position in the early front-end-of-line
14nm FinFET Gate Contact Integration: Process Flow, Physics, and Module Dependencies Explained
Role in the Complete Flow In the 14nm FinFET process flow, the gate contact (CONTACT_CG) module occupies a critical bridge between front-end-of-line (FEOL) devi
40nm BSI CMOS Image Sensor Contact Formation: Process Flow, Mechanisms, and Integration Logic
Role in the Complete Flow In the 40nm BSI CMOS Image Sensor process flow, the contact formation module serves as the critical bridge between front-end-of-line (
28nm Planar Copper Bump Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 28nm Planar copper bump (CB) module occupies a critical junction between back-end-of-line (BEOL) interconnect completion and wafer
14nm FinFET Contact Etch-Stop and Pre-Metal Dielectric Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 14nm FinFET contact etch-stop and pre-metal dielectric (PMD) integration sits at a critical juncture in the transistor fabrication
28nm Planar Well Formation Process Flow: Integration Logic, Device Physics, and Module Dependencies
Role in the Complete Flow The well formation module in the 28nm planar process flow serves as the foundational doping architecture upon which all subsequent tra
14nm FinFET Metal-One Interconnect Integration: Process Flow, Physics, and Module Dependencies
Role in the Complete Flow The metal-one (M1) interconnect module in a 14nm FinFET technology serves as the critical bridge between the transistor-level contact