Technical Blog
Deep dive into the physics and integration logic of semiconductor manufacturing
Film Stress vs Channel Strain: Follow the Mechanical Link
Follow the link from film stress to channel strain and transport, keeping mechanical and electrical evidence separate.
Mastering the Upper OCL Reflow Mechanism in 40nm BSI CMOS Image Sensors: Physics, Surface Free Energy, and Optical Integration
Function in the Complete Flow In a modern 40nm backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor (CIS), the optical stack above the silicon…
14nm FinFET Contact Etch-Stop and Pre-Metal Dielectric Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 14nm FinFET contact etch-stop and pre-metal dielectric (PMD) integration sits at a critical juncture in the transistor fabrication sequence — after…
14nm FinFET Second Pre-Metal Dielectric Integration: Process Flow Principles and Mechanisms
Role in the Complete Flow In the 14nm FinFET technology platform, the second pre-metal dielectric (PMD2) module occupies a pivotal position between front-end-of-line (FEOL)…
40nm BSI CMOS Image Sensor Backside Passivation Integration: Process Flow Principles and Device Physics
Role in the Complete Flow In a 40nm BSI CMOS Image Sensor (CIS) process flow, the backside passivation (BKPAS) module occupies a critical position between backside wafer thinning…
40nm BSI CMOS Image Sensor Color-Filter Array Integration: Process Flow Principles and Device Physics
Role in the Complete Flow The color-filter array (CFA) integration module in a 40nm backside illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor…
40nm BSI CMOS Image Sensor First Interlayer Dielectric Integration: Process Flow Principles and Module Logic
Role in the Complete Flow The 40nm BSI CMOS Image Sensor first interlayer dielectric (ILD1) module represents a critical back-end-of-line (BEOL) dielectric module.
40nm BSI CMOS Image Sensor Second Interlayer Dielectric Integration: Process Flow Principles and Physics
Role in the Complete Flow The second interlayer dielectric (ILD2) module in a 40nm backside-illuminated (BSI) CMOS image sensor sits at a pivotal position within the 40nm BSI…
40nm BSI CMOS Image Sensor Third Interlayer Dielectric Integration: Process Flow Principles and Device Physics
Role in the Complete Flow The third interlayer dielectric (ILD3) module in a 40nm BSI CMOS Image Sensor occupies a pivotal position within the back-end-of-line (BEOL)…
40nm BSI CMOS Image Sensor Fourth Interlayer Dielectric Integration: Process Flow Principles and Device Physics
Role in the Complete Flow The fourth interlayer dielectric (ILD4) module in a 40nm backside-illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor (CIS)…
40nm BSI CMOS Image Sensor Fifth Interlayer Dielectric Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow In the 40nm backside-illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor process, the fifth interlayer dielectric (ILD5)…
40nm BSI CMOS Image Sensor ILD6 Integration: Process Flow Principles and Dielectric Physics
Role in the Complete Flow In a 40nm back-side illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor fabrication sequence, the sixth interlayer dielectric…