Technical Blog
Deep dive into the physics and integration logic of semiconductor manufacturing
40nm BSI CMOS Image Sensor Backside Passivation Integration: Process Flow Principles and Device Physics
Role in the Complete Flow In a 40nm BSI CMOS Image Sensor (complementary metal oxide semiconductor image sensor) process flow, the backside passivation (BKPAS)
14nm FinFET Second Pre-Metal Dielectric Integration: Process Flow Principles and Mechanisms
Role in the Complete Flow In the 14nm FinFET technology platform, the second pre-metal dielectric (PMD2) module occupies a pivotal position between front-end-of
40nm BSI CMOS Image Sensor Fifth Interlayer Dielectric Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow In the 40nm backside-illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor process, the fifth interlayer diele
40nm BSI CMOS Image Sensor Upper Optical Clear-Layer and Microlens Integration: Process Flow Principles and Physics
Role in the Complete Flow The 40nm BSI CMOS Image Sensor upper optical clear-layer and microlens integration module sits at the very top of the backside optical
40nm BSI CMOS Image Sensor Color-Filter Array Integration: Process Flow Principles and Device Physics
Role in the Complete Flow The color-filter array (CFA) integration module in a 40nm backside illumination (BSI) complementary metal-oxide-semiconductor (CMOS) i
40nm BSI CMOS Image Sensor ILD6 Integration: Process Flow Principles and Dielectric Physics
Role in the Complete Flow In a 40nm back-side illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor fabrication sequence, the sixth inte
40nm BSI CMOS Image Sensor Third Interlayer Dielectric Integration: Process Flow Principles and Device Physics
Role in the Complete Flow The third interlayer dielectric (ILD3) module in a 40nm BSI CMOS Image Sensor occupies a pivotal position within the back-end-of-line
40nm BSI CMOS Image Sensor Fourth Interlayer Dielectric Integration: Process Flow Principles and Device Physics
Role in the Complete Flow The fourth interlayer dielectric (ILD4) module in a 40nm backside-illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) ima
40nm BSI CMOS Image Sensor Lower Optical Clear-Layer Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow In a 40nm backside illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor, the lower optical clear-layer (LOCL
40nm BSI CMOS Image Sensor Second Interlayer Dielectric Integration: Process Flow Principles and Physics
Role in the Complete Flow The second interlayer dielectric (ILD2) module in a 40nm backside-illuminated (BSI) CMOS image sensor sits at a pivotal position withi
14nm FinFET Contact Etch-Stop and Pre-Metal Dielectric Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 14nm FinFET contact etch-stop and pre-metal dielectric (PMD) integration sits at a critical juncture in the transistor fabrication
40nm BSI CMOS Image Sensor Light-Shield and Aperture-Grid Integration: Process Flow Principles and Integration Logic
Role in the Complete Flow In a 40nm backside-illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) process flow, the light-shield