Abrasive dispersion quality influences defectivity rather than removal rate, as agglomerated particles generate high local stresses that translate into scratches without improving planarization efficiency [P4].
The M2 Cu CMP step is required to remove copper overburden deposited during M2 Cu electrofill and to restore a globally planar surface suitable for subsequent BEOL patterning and etch control in a 14 nm FinFET process flow [P2]. The Damascene in…
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