This step grows Si in cavities of the complementary source/drain branch; the earlier SiGe epitaxy occupies different windows and has distinct strain physics (Engineering Practice).

In depth

This step follows the Si cavity etch, CSOH strip and artificial-oxide removal, and precedes Spacer3 deposition and etchback. The source image identifies Si Epi: the newly added material is silicon, while existing SiGe belongs to the earlier branch.

Crystal growth and selectivity

Risks & Challenges

Residual oxide, parasitic nucle…

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14nm FinFETPreview

Dummy Gate a‑Si Etch

124/ 362

S/D Si/SiGe Epitaxy

RMG Tungsten CMP

Next step

1substrate

2Pad Oxide Growth 3Pad Nitride Deposition 4Stop Oxide Deposition 5a-Si Hardmask Deposition

34STI Liner Deposition 35STI FCVD Oxide Fill 37SiO2 CMP to SiN Stop

66Fin Recess Etch

91Dummy Gate a‑Si Etch

124S/D Si/SiGe Epitaxy

+16 steps

157RMG Tungsten CMP

165PECVD SiN Hardmask Deposition 173SC Contact Trench Dielectric Etch 194SC W Fill CMP

262W Fill CMP

361M2 Cu CMP

Process Cross-Section

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Step highlight

This step grows Si in cavities of the complementary source/drain branch; the earlier SiGe epitaxy occupies different windows and has distinct strain physics (Engineering Practice).