14nm FinFET 14nm Process Step | SemiFlows

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RMG Tungsten CMP

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PECVD SiN Hardmask Deposition

SC Contact Trench Dielectric Etch

165PECVD SiN Hardmask Deposition 173SC Contact Trench Dielectric Etch 194SC W Fill CMP

+27 steps

Process Cross-Section

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Step highlight

PECVD nitride grows over the oxide hardmask and supplies a mask layer for subsequent contact pattern transfer (Engineering Practice).

In depth

This step follows PEALD Oxide Hardmask Deposition and precedes CSOH Spin Coat and SC SOC Coat. Plasma-generated species participate in growth, while charging, ion interaction and stress can still affect underlying layers. Deposition itself does not open a self-aligned contact.