The presence of carbon-containing species in the plasma leads to simultaneous polymer formation on sidewalls, which suppresses lateral etching and preserves vertical trench profiles by limiting radical diffusion to horizontal surfaces [P1].
The SC Contact Trench Dielectric Etch is positioned after a sequence of hard mask opening steps to transfer the lithographically defined self-aligned contact (SAC) pattern into the interlayer dielectric (ILD) stac…
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