Replacement-gate tungsten CMP clears field conductors and controls gate-top profiles; inherited trench geometry and polishing height alone do not determine threshold voltage (Engineering Practice).

In depth

This operation follows RMG W Fill after work-function metals and a TiN liner. RMG Cap Deposition and PMD2 dielectric processing follow. Clearing excess field tungsten and conductive layers separates neighboring electrodes while retaining trench conductors. Lateral boundaries are inherited from the e…

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14nm FinFETPreview

S/D Si/SiGe Epitaxy

157/ 362

RMG Tungsten CMP

PECVD SiN Hardmask Deposition

Next step

1substrate

2Pad Oxide Growth 3Pad Nitride Deposition 4Stop Oxide Deposition 5a-Si Hardmask Deposition

34STI Liner Deposition 35STI FCVD Oxide Fill 37SiO2 CMP to SiN Stop

66Fin Recess Etch

91Dummy Gate a‑Si Etch

124S/D Si/SiGe Epitaxy

157RMG Tungsten CMP

+16 steps

165PECVD SiN Hardmask Deposition 173SC Contact Trench Dielectric Etch 194SC W Fill CMP

262W Fill CMP

361M2 Cu CMP

Process Cross-Section

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Step highlight

Replacement-gate tungsten CMP clears field conductors and controls gate-top profiles; inherited trench geometry and polishing height alone do not determine threshold voltage (Engineering Practice).

In depth

Read the full explanation and sources for free.