Gate-contact tungsten CMP clears field metal over Ti/TiN liners while retaining contacts and preparing the surface for M1 integration (Engineering Practice).

In depth

This step follows Ti adhesion/barrier, TiN barrier and W fill deposition, and precedes PMD recessing, M1 ESL and ILD1 deposition. It belongs to CONTACT_CG and processes contact fill, distinct from the earlier RMG tungsten CMP that completes the channel-controlling gate.

Field clearance and retained fill

Risks & Challenges

Field residue can bridge cont…

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SC W Fill CMP

262/ 362

W Fill CMP

M2 Cu CMP

Next step

1substrate

2Pad Oxide Growth 3Pad Nitride Deposition 4Stop Oxide Deposition 5a-Si Hardmask Deposition

34STI Liner Deposition 35STI FCVD Oxide Fill 37SiO2 CMP to SiN Stop

66Fin Recess Etch

91Dummy Gate a‑Si Etch

124S/D Si/SiGe Epitaxy

157RMG Tungsten CMP

165PECVD SiN Hardmask Deposition 173SC Contact Trench Dielectric Etch 194SC W Fill CMP

262W Fill CMP

+27 steps

361M2 Cu CMP

Process Cross-Section

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Step highlight

Gate-contact tungsten CMP clears field metal over Ti/TiN liners while retaining contacts and preparing the surface for M1 integration (Engineering Practice).