Selective isolation oxide removal lowers the surface around existing silicon fins, increasing exposed sidewall height for subsequent gate formation (Engineering Practice).
Fin Recess Etch in this Flow removes STI oxide between existing silicon fins, lowering the isolation surface and exposing more fin sidewall. It does not lower the silicon fin top or form a source/drain silicon recess for epitaxy. The original step diagram identifies oxide …
Read the full explanation and sources for free.
Sign Up Free