In bulk silicon configurations, the substrate undergoes thermal oxidation to grow a screen oxide, followed by high-energy well implantations to define the p-wells and n-wells [P1].
The substrate preparation step is the initial baseline phase of the 14nm FinFET integration flow, establishing the physical, crystallographic, and electrical foundation for the entire device architecture [T1][T2]. In the 14nm node, the starting substrate must provide an ultra-clean, defect-free single-crystalline surf…
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