Pad Oxide Growth - 14nm FinFET 14nm | SemiFlows

14nm FinFETPreview

substrate

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Pad Oxide Growth

Pad Nitride Deposition

2Pad Oxide Growth 3Pad Nitride Deposition 4Stop Oxide Deposition 5a-Si Hardmask Deposition

+12 steps

Process Cross-Section

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Step highlight

The growth of the pad oxide is achieved via dry thermal oxidation, where the substrate is exposed to oxygen gas at elevated temperatures [P4].

In depth

In the 14nm FinFET patterning module, the vertical fins are defined using a multi-layer hardmask stack that undergoes advanced lithography and anisotropic etching [P1][P2]. To initiate this patterning stack, a robust silicon nitride layer (Pad Nitride) is deposited to serve as both an etch mask and a chemical mechanical planarization (CMP) stop layer [P4]…