Technical Blog
Deep dive into the physics and integration logic of semiconductor manufacturing
40nm BSI CMOS Image Sensor Via-Five Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 40nm BSI CMOS Image Sensor via-five (V5) integration module occupies a critical position within the multilevel interconnect stack of a…
40nm BSI CMOS Image Sensor Well Formation Process Flow: Integration Logic, Physics, and Ox Growth Principles
Role in the Complete Flow In the 40nm BSI CMOS Image Sensor process flow, the well formation module occupies a pivotal position between device isolation completion and…
40nm BSI CMOS Image Sensor Starting Wafer and Substrate Preparation: Principles, Integration Logic, and Process Physics
Role in the Complete Flow The 40nm BSI CMOS Image Sensor starting wafer and substrate preparation module — often referred to as the WFR module — is the foundational process…
7nm FinFET Contact Integration Process Flow: Principles, Mechanisms, and Integration Logic
Role in the Complete Flow The 7nm FinFET contact integration module sits at the critical interface between front-end-of-line (FEOL) transistor formation and middle-of-line…
7nm FinFET Process Flow: Integration Principles, Device Physics, and Module Dependencies
Process Map and Scope The 7nm FinFET technology node represents a pivotal generation in advanced logic semiconductor manufacturing, where three-dimensional channel wrapping…
7nm FinFET Thick Gate Oxide Growth Process Flow: Physical Mechanisms, Integration Logic, and Device Physics
Role in the Complete Flow In a 7nm FinFET integration flow, the growth of thick gate oxides occurs early in the gate module sequence, immediately following fin formation, shallow…
7nm FinFET Metal-Zero Interconnect Integration: Process Flow Principles, ESL Deposition Mechanics, and Module Dependencies
Role in the Complete Flow The metal-zero (M0) interconnect module sits at a pivotal junction in the 7nm FinFET process flow, bridging the middle-of-line (MOL) contact structures…
7nm FinFET Metal-One Interconnect Integration: Process Flow Principles and ESL Deposition Mechanics
Role in the Complete Flow The metal-one (M1) interconnect module in a 7nm FinFET technology node occupies a pivotal position in the process architecture: it is the first metal…
7nm FinFET Metal-Ten Interconnect Integration: Process Flow Principles, ESL Chemistry, and Module Dependencies
Role in the Complete Flow The 7nm FinFET technology platform represents a generation where extreme ultraviolet (EUV) lithography is comprehensively applied to middle-of-line…
7nm FinFET Metal-Eleven Interconnect Integration: Process Flow Principles, ESL Chemistry, and Module Dependencies
Role in the Complete Flow The metal-eleven (M11) interconnect module occupies a critical position within the upper back-end-of-line (BEOL) stack of a 7nm FinFET technology…
7nm FinFET Top-Metal Interconnect Integration: M12 Module Process Flow Principles and ESL Chemistry
Role in the Complete Flow The 7nm FinFET top-metal interconnect integration represents the final stage of the back-end-of-line (BEOL) wiring stack, where the top metal…
7nm FinFET Metal-Two Interconnect Integration: Process Flow Principles and ESL Deposition Mechanics
Role in the Complete Flow The metal-two (M2) interconnect module in a 7nm FinFET process flow occupies a critical position in the back-end-of-line (BEOL) architecture.