At the same time, excessive ion energy can introduce compressive intrinsic stress and trap inert species, illustrating the fundamental trade-off between densification and stress generation inherent to plasma-based SiN growth [P1].
The Passivation SiN Deposition step is positioned after passivation oxide formation to complete the BEOL protective stack by adding a dense, chemically inert barrier over the underlying dielectric and metal pad structures, whic…
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