Optical imaging establishes resist solubility contrast in Gate Contact_E2 Lithography, enabling development to retain the intended second pattern [P3].
In this flow, E1 and E2 lithography define two groups of gate-contact locations. SiON and memorization etches retain E1 before recoating prepares E2. The second pattern is subsequently recorded before Gate Contact Integrated Etch transfers the combined openings downward. This sequence follows the curr…
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