Dummy-gate silicon etching transfers the mask pattern into silicon for later spacer and source/drain alignment; patterned gate length differs from effective channel length (Engineering Practice).
This step follows Integrated Hardmask Etch and Post Etch Clean; cleaning, Spacer Deposition and SiN Cap Deposition follow. It retains patterned dummy gates while clearing exposed silicon, rather than performing the much later dummy-gate removal for replacement. Current gate oxide and later dielectric …
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