A high-quality single-crystal silicon wafer with a well-defined surface orientation provides a foundation for predictable oxidation behavior and low interface state density, enabling controlled threshold voltage and mobility [T2].
The Starting Wafer step establishes the crystallographic, electrical, and defect-quality foundation upon which the entire 7 nm HKMG FinFET process is constructed, because all subsequent patterning, oxidation, and gate-s…
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