Via-contact CMP clears W/TiN/Ti field coverage while retaining in-hole connections and preparing the surface for M0 dielectric integration (Engineering Practice).
This step follows VC Fill Deposition in a W/TiN/Ti stack and precedes Post CMP Clean, M0 ESL and PMD5 deposition. Earlier Co contact CMP does not define the material here, and planarization does not guarantee uniformity of every subsequent film.
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