28nm Planar Flow

Following the patterning of the Salicide Block (SAB) layer, the active areas where silicide is intended are selectively exposed while non-silicide areas remain protected by the dielectric block mask [A1]. The Pre-Silicide Si PAI (Pre-Amorphization Implant) is positioned immediately prior to the Pre-Silicide Clean and NiPt deposition to amorphize the near-surface region of the exposed silicon source/drain contacts [P1][A1]. By introducing controlled lattice damage, the step prepares the silicon…

• [High] High Junction Leakage via End-of-Range (EOR) Defects: If the Si PAI implant energy is too high, the projected range of the ions will extend deep into the source/drain region, placing the amorphous-crystalline ($a/c$) interface too close to the p-n junction boundary [P4][T1]. During subsequent annealing, interstitial-type defects aggregate at the End-of-Range region just below the original $a/c$ interface [T1]. If these EOR dislocation loops are not fully annealed out and remain with…